Static Current-Voltage Characteristics of Silicon n+-i-n+ Resistors at Liquid Helium Temperatures
نویسندگان
چکیده
The behaviour of the (I-V) characteristics is investigated in n+-i-n+ highly compensated Si resistors at temperatures 4.2-45K. The conduction mechanisms are discussed in detail here. The prebreakdown and breakdown regions of I-V characteristics were simulated by a one-dimensional model including the evidence of impurity high compensation and freeze out effects as well as the shallow-dopants impact ionisation by the injected hot carriers into the base. Negative resistance (S-type) phenomena are also observed on the characteristics for high injection current densities.
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